THE PHOTOLUMINESCENCE AND DARK CURRENT VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURES WITH InAs QUANTUM DOTS
Abstract
The simulation of the photoluminescence and dark current-voltage characteristics of heterostructures with a single layer of quantum dots. The presence of the peak quantum transitions in the main points at 1,2 eV (modeling) and 1,12 eV (experimental). The experimental peak has a greater width (0,13 eV) at half maximum fundamental radiation transitions in quantum dots, compared to the modeled (0,06 eV). There is a shift of the experimental peak to longer wavelengths by about 65 meV, indicating that the presence in the dispersion structure the size of quantum dots. The dark current-voltage simulated characteristic at a temperature of 90 K and zero bias shows the value of the dark current density of 10-7 A/cm2, which is much smaller than the measurement results (10-6 A/cm2). There is a difference in the nature of the distribution depending on when the negative and positive displacement between experiment and simulation results associated with the presence of quantum dots larger.
About the Authors
Leonid Lunin
North Caucasus Federal Univercity
Russian Federation
Russian Federation
Eduard Blokhin
Platov South-Russian State Polytechnic University
Russian Federation
Russian Federation
Alexander Pashchenko
Southern Scientific Center RAS
Russian Federation
Russian Federation
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Review
For citations:
Lunin L., Blokhin E., Pashchenko A. THE PHOTOLUMINESCENCE AND DARK CURRENT VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURES WITH InAs QUANTUM DOTS. Newsletter of North-Caucasus Federal University. 2016;(2):31-36. (In Russ.)
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