GROWTH OF ALUMINUM NITRIDE THIN FILMS VIA PEALD WITH VARIOUS PLASMA EXPOSITION DURATIONS
Abstract
Films of aluminum nitride were grown by the method ofplasma-activated ALD. The impact of duration of plasma exposure stage on the growth rate, composition and microstructures was analyzed. These samples were examined by IR spectroscopy, ellipsometry and X-ray analysis. It was found that, film thickness of AlN increases by the amount not more than 0.12 nm per cycle. Furthermore, it was found that the synthesis of crystalline films of aluminum nitride is possible under plasma exposure durations longer than 20 seconds.
About the Authors
Mikhail Ambartsumov
North Caucasus Federal Univercity
Russian Federation
Russian Federation
Alexander Altakhov
North Caucasus Federal Univercity
Russian Federation
Russian Federation
Vitaly Tarala
North Caucasus Federal Univercity
Russian Federation
Russian Federation
Vladimir Martens
North Caucasus Federal Univercity
Russian Federation
Russian Federation
Sergey Lisitsyn
North Caucasus Federal Univercity
Russian Federation
Russian Federation
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Review
For citations:
Ambartsumov M., Altakhov A., Tarala V., Martens V., Lisitsyn S. GROWTH OF ALUMINUM NITRIDE THIN FILMS VIA PEALD WITH VARIOUS PLASMA EXPOSITION DURATIONS. Newsletter of North-Caucasus Federal University. 2016;(2):7-12. (In Russ.)
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