CRYSTAL PROPERTIES OF SILICON OBTAINED BY THERMOMIGRATION

Abstract

The article presents research results of the crystal structure of the silicon regions, locally recrystallized in the process of thermomigration liquid silicon-aluminum areas of a silicon substrate. Selective etching of silicon is found that recrystallized in the channel, there are areas that have increased defects. Determined that these areas are located at the surfaces of the substrate, the depth of these areas does not exceed the thickness of the liquid zone. Out defective areas, the channel has low densities of dislocations and a high degree of monocrystalline silicon. Using the methods of x-ray diffractometry and transmission electron microscopy high resolution revealed that on the border of the channel and the substrate are dislocation half-stitch, which lie in the surface layers of the front and back sides of the substrate. In recrystallized areas are detected the {311} - defects.