CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS
Abstract
The technique of obtaining and the first results of studying thin crystalline silicon carbide films by deposition from a gas phase in a reactor with cold walls is presented in the article. Trimethylchlorosilane was used as the precursor material, nitrogen was used as the carrier gas for the formation of the vapor-gas mixture. The films were produced on the Easytube 3000 chemical synthesis unit from the manufacturer Firstnano. X-ray patterns of synthesized samples were obtained and investigated.
About the Authors
Vladimir Martens
North-Caucasus Federal University
Russian Federation
Russian Federation
Svyatoslav Krandievsky
North-Caucasus Federal University
Russian Federation
Russian Federation
Ilya Nikitin
North-Caucasus Federal University
Russian Federation
Russian Federation
References
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Review
For citations:
Martens V., Krandievsky S., Nikitin I. CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS. Newsletter of North-Caucasus Federal University. 2017;(3):24-27. (In Russ.)
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