CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS
Abstract
The technique of obtaining and the first results of studying thin crystalline silicon carbide films by deposition from a gas phase in a reactor with cold walls is presented in the article. Trimethylchlorosilane was used as the precursor material, nitrogen was used as the carrier gas for the formation of the vapor-gas mixture. The films were produced on the Easytube 3000 chemical synthesis unit from the manufacturer Firstnano. X-ray patterns of synthesized samples were obtained and investigated.
About the Authors
Vladimir Martens
North-Caucasus Federal University
Россия
Россия
Svyatoslav Krandievsky
North-Caucasus Federal University
Россия
Россия
Ilya Nikitin
North-Caucasus Federal University
Россия
Россия
References
1. Chelnokov V. E., Syrkin A. L. High temperature electronics using Sic: actual situation and unsolved problems // Materials science and Engineering B. 1997. V. 46. P. 248-253.
2. Хениш Г., Рой Р. М. Карбид кремния / пер. с англ. М.: Мир, 1972. 349 с.
3. Физические методы исследования материалов твердотельной электроники / С. И. Рембеза, Б. М. Синельников, Е. С. Рембеза, Н. И. Каргин. Ставрополь: СевКавГТУ, 2002. 432 с.
4. Chen J., Steckl A., Loboda M. Grows and Characterization of N-doped SiC Films from Trimethylsilane // Materials science forum. 2000. V. 338-342. P. 273-276.
Review
For citations:
Martens V., Krandievsky S., Nikitin I. CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS. Newsletter of North-Caucasus Federal University. 2017;(3):24-27. (In Russ.)
Views:
164
JATS XML
Email this article 